Memristor 

1. "Conductive AFM studies of TiO2 memristive junctions"
Ruth Munstermann, HGF Research Center Jülich, Germany and HP Labs

Employing conductive AFM we investigate the influence of forming and resistive switching on the structure and local conductivity of TiO2 memristive junctions.

2. "Synchrotron Radiation Studies of TiO2 Memristive Material"
John Paul Strachan, HP Labs

Spatially resolved x-ray based studies are shown for TiO2 memristive devices in several resistance states, providing direct evidence for localized heating and higher conductance channels.

3. "Electrical transport and in situ temperature measurement of electroformed TiO2 memristive junctions"
Julien Borghetti, HP Labs

We report the temperature dependence of the electrical transport in TiO2 memristive switches. The switching is in particular analyzed as a tunneling barrier modulation activated by joule heating.

4. "Bulk-effect memristive devices"
Dmitri Strukov, HP Labs

A coupled (ionic-electronic) drift diffusion model of semiconductor thin film with mobile dopants is numerically simulated to obtain physical insight into the transport processes responsible for memristive behavior.

5. "Integration of Memristors with CMOS Circuits by Nanoimprint Lithography"
Qianfei Xia, HP Labs

Nanoimprint lithography was used to successfully integrate memristors vertically with a commercially available CMOS substrate, forming a nano/CMOS hybrid circuit.

6. "A hybrid nano-memristor/transistor logic circuit capable of self-programming"
Zhiyong Li

We built hybrid integrated circuits that interconnected nanoscale memristor crossbars and conventional silicon FETs in a single chip, and demonstrated the capability of self-programming of memristor inside the crossbar array.

7. "Local anodic Oxidation of TiOx devices"
Gilberto Medeiros-Ribeiro, HP Labs

By implementing local anodic oxidation of Ti films, we were able to observe hysteretic behavior with different resistance states. Here we show preliminary results that suggest a promising path for alternative, planar device architectures.

8. "Electrical forming and switching mechanisms of metal/oxide/metal memristive switches"
J. Joshua Yang, HP Labs

We have built micro- and nano-scale titanium dioxide (TiO2) junction devices intentionally doped with oxygen vacancies that exhibit fast bipolar non-volatile switching, and have examined the mechanisms of electroforming and switching.